Author/Authors :
Robinson، نويسنده , , D. and Allport، نويسنده , , P.P. and Bizzell، نويسنده , , J. and Buttar، نويسنده , , C. and Carter، نويسنده , , A.A. and Carter، نويسنده , , J.R. and Goodrick، نويسنده , , M. and Greenall، نويسنده , , A. and Hill، نويسنده , , J.C. and Morgan، نويسنده , , D. and Munday، نويسنده , , D.J. and Ohsugi، نويسنده , , T. and Phillips، نويسنده , , P.W. and Riedler، نويسنده , , P. and Smith، نويسنده , , N.A. and Terada، نويسنده ,
Abstract :
N-strip on n-bulk silicon microstrip detectors were irradiated at the CERN PS to 3×1014 p cm-2 and their post-irradiation performance evaluated using fast binary readout electronics. Strip noise measurements demonstrate that detectors using conventional p-stop strip isolation are vulnerable to microdischarge at high bias voltages after irradiation. However, a novel isolation technique is shown to suppress microdischarge and lead to excellent post-irradiation characteristics.
