Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities

The investigation of traps and recombination centres in structures based on ZnSe single crystals by means of the deep level transient spectroscopy, photoluminescence and electroluminescence methods are presented. The implantation of Ag+, Au+ and N+ ions was used for the creation of these centres. The activation energies equal to 0.26, 0.35 and 0.86 eV were determined from the temperature dependencies of the carriers emission rate from DLTS spectra for majority carriers (electrons). The levels 0.42 and 0.26 eV were observed only in the samples implanted with Ag and Au, respectively. In the case of minority carriers (holes), in all the diodes produced by Ag+ ions implantation, the depth of the trap was 0.30 eV. Traps with a depth of about 0.72 eV were observed independently on various kind of impurities. In all the cases when these impurities are used together with nitrogen a hole trap with a depth of 0.47 eV is observed. The concentrations and capture cross-sections of the centres were calculated photo- and electroluminescence spectra of the implanted samples and structures are presented.