Author/Authors :
Bisogni، نويسنده , , M.G. and Bottigli، نويسنده , , U. and Fantacci، نويسنده , , M.E. and Stefanini، نويسنده , , A. and Bertolucci، نويسنده , , E. and Conti، نويسنده , , M. and Russo، نويسنده , , P. and Cola، نويسنده , , A. and Quaranta، نويسنده , , F. and Vasanelli، نويسنده , , L. and Stefanini، نويسنده , , G.، نويسنده ,
Abstract :
GaAs optoelectronic switches as local control of the HV MSGCs strips are being developed for the CMS experiment. The radiation environment inside the CMS tracker will be very high. Typical hadron fluence will be up to ≈1014 cm−2 and ionising doses as large as 100 kGy during the experiment lifetime. The aim of this work is to test the performance of some GaAs devices in terms of radiation hardness up to the levels of hadron fluence and ionising doses expected inside the CMS tracker.
