Author/Authors :
Belogurov، نويسنده , , S and Bressi، نويسنده , , G and Carugno، نويسنده , , G and Conti، نويسنده , , E and Iannuzzi، نويسنده , , D and Meneguzzo، نويسنده , , A.T، نويسنده ,
Abstract :
Infrared emission from CsI(Tl) excited by ∼70 keV electrons was detected with an InGaAs PIN photodiode. Some parameters of infrared scintillation were studied. The emission spectrum is located between 1.55 and 1.70 μm with a maximum at 1.60 μm. The light yield of infrared scintillation is (4.9±0.3)×103 photons/MeV. Infrared scintillation caused by 3 MeV α-particles is detected as well.
