Author/Authors :
Nouais، نويسنده , , D and Boetti، نويسنده , , N and Bonvicini، نويسنده , , V and Cerello، نويسنده , , P and Giubellino، نويسنده , , P and Hernلndez-Montoya، نويسنده , , R and Kolojvari، نويسنده , , A and Mazza، نويسنده , , G and Nissinen، نويسنده , , J and Rashevsky، نويسنده , , A and Rivetti، نويسنده , , A and Tosello، نويسنده , , F and Vacchi، نويسنده , , A، نويسنده ,
Abstract :
We report results of drift velocity monitoring in silicon drift detectors, obtained in beam test conditions using MOS charge injectors. We are able to correct velocity variations as small as 0.1% due to temperature variations of the order of 0.1 K and consequently maintain an optimal space resolution.
Keywords :
Charge injectors , Silicon detectors , Position sensitive detector , Drift chambers
