Title of article
Review on the development of cryogenic silicon detectors
Author/Authors
Casagrande، نويسنده , , L. and Abreu، نويسنده , , M.C. and Bell، نويسنده , , W.H. and Berglund، نويسنده , , P. and de Boer، نويسنده , , W. and Borer، نويسنده , , K. and Buontempo، نويسنده , , S. and Chapuy، نويسنده , , S. and Cindro، نويسنده , , V. and Ambrosio، نويسنده , , N. and Da Vi?، نويسنده , , C. and Devine، نويسنده , , S. and Dezillie، نويسنده , , B. and Dimcovski، نويسنده , , Z. and Eremin، نويسنده , , V. and Esposito، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
150
To page
154
Abstract
In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400 μm thick “double-p” silicon detector irradiated up to 1×1015 n/cm2 delivers a mip signal of about 27 000 electrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and “in situ” irradiation of a pad detector during operation in the cold are also discussed.
Keywords
Lazarus , cryogenic , Silicon , Detectors
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2001
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2189475
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