Author/Authors :
Casagrande، نويسنده , , L. and Abreu، نويسنده , , M.C. and Bell، نويسنده , , W.H. and Berglund، نويسنده , , P. and de Boer، نويسنده , , W. and Borer، نويسنده , , K. and Buontempo، نويسنده , , S. and Chapuy، نويسنده , , S. and Cindro، نويسنده , , V. and Ambrosio، نويسنده , , N. and Da Vi?، نويسنده , , C. and Devine، نويسنده , , S. and Dezillie، نويسنده , , B. and Dimcovski، نويسنده , , Z. and Eremin، نويسنده , , V. and Esposito، نويسنده , , A، نويسنده ,
Abstract :
In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400 μm thick “double-p” silicon detector irradiated up to 1×1015 n/cm2 delivers a mip signal of about 27 000 electrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and “in situ” irradiation of a pad detector during operation in the cold are also discussed.
Keywords :
Lazarus , cryogenic , Silicon , Detectors
