Title of article
Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS
Author/Authors
Bacchetta، نويسنده , , N. and Bisello، نويسنده , , D. and Candelori، نويسنده , , A. and Rold، نويسنده , , M.Da and Descovich، نويسنده , , M. M. Kaminski ، نويسنده , , Bernard A. and Messineo، نويسنده , , Paul A. Del Rizzo، نويسنده , , F. and Verzellesi، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
204
To page
206
Abstract
To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC.
Keywords
Semiconductors , Tracking , Position sensitive detectors , Neutron radiation effects , p–n Junctions
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2001
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2189516
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