Author/Authors :
Bacchetta، نويسنده , , N. and Bisello، نويسنده , , D. and Candelori، نويسنده , , A. and Rold، نويسنده , , M.Da and Descovich، نويسنده , , M. M. Kaminski
، نويسنده , , Bernard A. and Messineo، نويسنده , , Paul A. Del Rizzo، نويسنده , , F. and Verzellesi، نويسنده , , G.، نويسنده ,
Abstract :
To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC.
Keywords :
Semiconductors , Tracking , Position sensitive detectors , Neutron radiation effects , p–n Junctions
