Title of article
Correction of dopant concentration fluctuation effects in silicon drift detectors
Author/Authors
Nouais، نويسنده , , D. and Bondila، نويسنده , , M. and Bonvicini، نويسنده , , V. and Cerello، نويسنده , , P. and Crescio، نويسنده , , E. and Giubellino، نويسنده , , Marيa P. and Hernلndez-Montoya، نويسنده , , R. and Kolojvari، نويسنده , , A. and Montaٌo، نويسنده , , L.M. and Nilsen، نويسنده , , B.S. and Piemonte، نويسنده , , C. and Rashevsky، نويسنده , , A. and Tosello، نويسنده , , F. and Vacchi، نويسنده , , A. and Wheadon، نويسنده , , R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
222
To page
225
Abstract
Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations.
Keywords
Silicon detectors , Drift detectors , dopant concentration , Spatial resolution
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2001
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2189532
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