Author/Authors :
Borer، نويسنده , , K. and Janos، نويسنده , , S. and Li، نويسنده , , Z. and Dezillie، نويسنده , , B. and Da Vi?، نويسنده , , C. and Granata، نويسنده , , V. and Casagrande، نويسنده , , J. L. M. de Boer، نويسنده , , R.W.I. and Lourenço، نويسنده , , C. and Niinikoski، نويسنده , , T.O. and Palmieri، نويسنده , , V.G. and Chapuy، نويسنده , , S. and Dimcovski، نويسنده , , Z. and Grigoriev، نويسنده , , E. and Bell، نويسنده , , W. and Devine، نويسنده ,
Abstract :
We present results on the measurement of the charge collection efficiency of a p+/n/p+ silicon detector irradiated to 1×1015 n/cm2, operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p+/n/n+), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80%, an unprecedented result for a silicon detector irradiated to such a high dose.
