Author/Authors :
Ono، نويسنده , , Kanta and Yeom، نويسنده , , Han Woong and Horiba، نويسنده , , Koji and Oh، نويسنده , , Jin Ho and Nakazono، نويسنده , , Shinsuke and Kihara، نويسنده , , Takayuki and Nakamura، نويسنده , , Kenya and Mano، نويسنده , , Takaaki and Mizuguchi، نويسنده , , Masaki and Oshima، نويسنده , , Masaharu and Aiura، نويسنده , , Yoshihiro and Kakizaki، نويسنده , , Akito، نويسنده ,
Abstract :
In order to satisfy demands to study the electronic structure of quantum nanostructures, a VUV beamline and a high-resolution and high-throughput photoemission end-station combined with a molecular beam epitaxy (MBE) system have been constructed at the BL-1C of the Photon Factory. An angle-resolved photoemission spectrometer, having high energy- and angular-resolutions; VG Microtech ARUPS10, was installed. The total energy resolution of 31 meV at the 60 eV of photon energy is achieved. For the automated angle-scanning photoemission, the electron spectrometer mounted on a two-axis goniometer can be rotated in vacuum by the computer-controlled stepping motors. Another distinctive feature of this end-station is a connection to a MBE chamber in ultahigh vacuum (UHV). In this system, MBE-grown samples can be transferred into the photoemission chamber without breaking UHV. Photoemission spectra of MBE-grown GaAs(0 0 1) surfaces were measured with high-resolution and bulk and surface components are clearly resolved.
