Author/Authors :
Breedon، نويسنده , , R and Bylsma، نويسنده , , B and Durkin، نويسنده , , L.S. and Gilmore، نويسنده , , J and Gu، نويسنده , , J and Hauser، نويسنده , , J and Holbrook، نويسنده , , B and Kim، نويسنده , , C.L and Ling، نويسنده , , T.Y and von der Mey، نويسنده , , M and Murray، نويسنده , , P and Rush، نويسنده , , C.J and Santiard، نويسنده , , J.C and Tripathi، نويسنده , , M، نويسنده ,
Abstract :
After a brief overview of the CMS EMU electronics system, results on radiation induced single event effects, total ionization dose and displacement effects will be reported. These results are obtained by irradiating the components on electronics boards with 63 MeV protons and 1 MeV neutrons. During the proton irradiation, the electronics board was fully under power, all components on the board were active and the data were read out in the same way as designed for CMS. No deterioration of analog performance for each of the three CMOS ASICs on the tested board was observed, up to a dose of 10 krad. Each of the tested FPGAs survived beyond the dose of 30 krad. No single event latch-up was detected for the CMOS ASICs up to a proton fluence of 2×1012 cm−2. Single Event Upsets (SEU) in FPGAs were detected and their cross-sections measured. SEU mitigation with triple module redundancy and voting was implemented and tested.
