Title of article :
An introduction to deep submicron CMOS for vertex applications
Author/Authors :
Campbell، نويسنده , , M and Anelli، نويسنده , , G and Cantatore، نويسنده , , E and Faccio، نويسنده , , F and Heijne، نويسنده , , E.H.M and Jarron، نويسنده , , P and Santiard، نويسنده , , J.-C and Snoeys، نويسنده , , W and Wyllie، نويسنده , , K، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
6
From page :
140
To page :
145
Abstract :
Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.
Keywords :
CMOS , Readout electronics , Vertex detectors
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2001
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2193107
Link To Document :
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