Title of article
Bistable damage in neutron-irradiated silicon diodes
Author/Authors
Cindro، نويسنده , , Danijela V. and Kolar-Ani?، نويسنده , , J. and Kramberger، نويسنده , , G. and Miku?، نويسنده , , M. and Zavrtanik، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
565
To page
568
Abstract
Standard and oxygenated high resistivity silicon diodes were irradiated with neutrons to fluences up to 2×1014 cm−2 1MeV neutron NIEL equivalent. After beneficial annealing at room temperature diodes were kept at 20°C. C–V measurements were performed regularly to determine the full depletion voltage. Bistable damage was activated with bias application to the diodes. Its creation rate was measured during different stages of reverse annealing. For a comparison, a change of full depletion voltage was determined also from TCT measurements.
Keywords
neutrons , Radiation damage , Annealing , bias , Bistability
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2193530
Link To Document