High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon

High-resolution photoinduced transient spectroscopy has been employed in a study on the formation of defects in bulk silicon due to 1 MeV neutron irradiation. Apart from divacancies in various charge states, complexes involving interstitial carbon and oxygen were revealed. The defect structure of float zone and Czochralski-grown material exposed to fluences of 2×1014 and 6.75×1014 cm−2 is compared.