Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes

We show that the accuracy of the gated diode method for measuring bulk generation lifetime and surface generation velocity in high resistivity silicon depends critically on the gate length of the test device, as a result of nonidealities affecting the gated diode operation. Minimization of the surface generation velocity measurement error requires the gate length to be suitably decreased, while long gate length structures are needed for accurate bulk generation lifetime extraction.