Title of article
Geant4 simulation of transition radiation detector based on DEPFET silicon pixel matrices
Author/Authors
Furletov، نويسنده , , Sergey and Furletova، نويسنده , , Julia، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
73
To page
78
Abstract
This paper presents new developments in Monte Carlo simulation for test beam measurements of a silicon transition radiation detector based on DEPFET—a silicon active pixel detector. The test of DEPFET with fiber radiator has been carried out at the DESY 5 GeV electron beam. Monte Carlo simulation of the test beam setup is based on Geant4. A comparison of Geant4 simulation with test beam data is presented.
Keywords
Transition radiation detector , Silicon detector , TRD , GEANT4 , Active pixel detector , DEPFET
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2013
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2193781
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