Geant4 simulation of transition radiation detector based on DEPFET silicon pixel matrices

This paper presents new developments in Monte Carlo simulation for test beam measurements of a silicon transition radiation detector based on DEPFET—a silicon active pixel detector. The test of DEPFET with fiber radiator has been carried out at the DESY 5 GeV electron beam. Monte Carlo simulation of the test beam setup is based on Geant4. A comparison of Geant4 simulation with test beam data is presented.