Title of article
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process
Author/Authors
Potenza، نويسنده , , A. and Bisello، نويسنده , , D. and Caselle، نويسنده , , M. and Costa، نويسنده , , M. and Demaria، نويسنده , , N. and Giubilato، نويسنده , , P. and Ikemoto، نويسنده , , Y. and Mansuy، نويسنده , , C. and Marchioro، نويسنده , , A. and Mattiazzo، نويسنده , , S. and Moll، نويسنده , , M. and Pacher، نويسنده , , L. and Pacifico، نويسنده , , N. and Pantano، نويسنده , , D. and Rivetti، نويسنده , , A. and Silvestrin، نويسنده , , L. and Snoeys، نويسنده , , W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
3
From page
347
To page
349
Abstract
The LePix project aims at developing monolithic pixel detectors in a 90 nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advanced CMOS process, has been investigated. Diodes of about 1 mm2 and pixel matrices were irradiated with neutrons at fluences from 1012 n/cm2 to 2 × 10 15 n / cm 2 and characterized using CV and IV measurements. Matrices have also been irradiated with Xrays and withstand at least 10 Mrad.
Keywords
maps , Xray irradiation , Neutron irradiation , Radiation tolerance , CMOS
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2013
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2194240
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