Title of article
Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications
Author/Authors
Ullلn، نويسنده , , M. and Wilder، نويسنده , , M. and Spieler، نويسنده , , H. and Spencer، نويسنده , , E. and Rescia، نويسنده , , S. and Newcomer، نويسنده , , F.M. and Martinez-McKinney، نويسنده , , F. and Kononenko، نويسنده , , W. and Grillo، نويسنده , , A.A. and Dيez، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
41
To page
46
Abstract
A new comprehensive method for assessing Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar transistors to be used for very high total doses is applied to an advanced SiGe HBT technology for its use in the ATLAS Upgrade at CERN. Conventional ELDRS assessment methods are combined with switched experiments (high/low dose rate), providing a way to verify the presence of ELDRS at very high doses in reasonable irradiation time. Additionally, an anomalous damage recovery has been found in transistors with saturated damage after further low dose rate irradiations.
Keywords
Radiation effect , Bipolar transistor , ELDRS , SiGe HBT transistors , Switched experiments , ATLAS upgrade
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2013
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2194470
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