Author/Authors :
Bloch، نويسنده , , Ph and Chang، نويسنده , , Y.-H and Chen، نويسنده , , A.E and Cheremukhin، نويسنده , , A and Egorov، نويسنده , , N and Go، نويسنده , , A and Golubkov، نويسنده , , S and Golutvin، نويسنده , , I and Hou، نويسنده , , S.R and Konjkov، نويسنده , , K and Kozlov، نويسنده , , Y and Kyriakis، نويسنده , , A and Lin، نويسنده , , W.T and Loukas، نويسنده , , D and Markou، نويسنده , , A and Mousa، نويسنده , , J and Peisert، نويسنده , , A and Sidorov، نويسنده , , A and Tsoi، نويسنده , , E and Zamiatin، نويسنده , , N and Zubarev، نويسنده , , E، نويسنده ,
Abstract :
This paper is a summary of a research and development programme, conducted during the past 3 years on the CMS Preshower silicon sensors to define the specifications. The main purpose was to study the radiation hardness of these devices resulting from the specific design (metal lines wider than the p+ implants) and the production technology, a deep n+ layer on the ohmic side. An acceptable noise and a uniform charge collection were guaranteed by an appropriate choice of the interstrip region width. About 65 sensors, of different designs and produced by six manufacturers, were irradiated with neutrons and protons and thoroughly tested before and after irradiation. The results of the tests and the final specifications are presented.
