Results of irradiation tests on standard planar silicon detectors with 7–10 MeV protons

Standard planar silicon detectors of 2 kΩ cm resistivity were irradiated with 7–10 MeV protons up to fluences of 7×1013 p/cm2. The effects of proton irradiation on the effective doping concentration (Neff) and leakage current (Ivol) as a function of fluence were investigated. The evolution of Neff and Ivol as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7–10 MeV protons are extracted.