Author/Authors :
He، نويسنده , , Chao and Li، نويسنده , , Xiangqing and Hua، نويسنده , , Hui and Li، نويسنده , , Zhihuan and Jiang، نويسنده , , Dongxing and Ye، نويسنده , , Yanlin and Zhang، نويسنده , , Shuangquan and Han، نويسنده , , Rui and Xu، نويسنده , , Chuan and Wang، نويسنده , , Enhong and Cheng، نويسنده , , Yiyuan and Sun، نويسنده , , Junjie and Niu، نويسنده , , Chenyang and Tian، نويسنده , , Zhengyang and Wang، نويسنده , , Shuo and Wang، نويسنده , , He and Song، نويسنده , , Yushou and Liu، نويسنده , , Huilan and Wang، نويسنده , , Jiansong and Hu، نويسنده , , Zhengguo and Yang، نويسنده , , Yanyun and Xu، نويسنده , , Hushan، نويسنده ,
Abstract :
To study the β decays of nuclei far from the β-stability line, an implantation and β detection system has been implemented at the Peking University. This detection system covers a wide energy range from keV to GeV while maintaining a good energy resolution and a low detection threshold. By correlating the implantation nuclei with their subsequent β-decays within the same pixel or adjacent pixels of a double-sided silicon detector (DSSD), the β decay properties of implanted nuclei can be measured with much less disturbance from other unstable nuclei and the random background.
