Title of article
Macroscopic results for a novel oxygenated silicon material
Author/Authors
Watts، نويسنده , , S.J. and Da Via’، نويسنده , , C. and Karpenko، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
153
To page
158
Abstract
High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O2i) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2–4 kΩ cm, with an oxygen concentration of 1015 and 1017 cm−3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown.
Keywords
DLTS , Oxygen dimer , Silicon detector , Oxygen
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2196361
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