• Title of article

    Theoretical calculations of the primary defects induced by pions and protons in SiC

  • Author/Authors

    Lazanu، نويسنده , , S. and Lazanu، نويسنده , , I. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    6
  • From page
    768
  • To page
    773
  • Abstract
    In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
  • Keywords
    Silicon , GaAS , hadrons , SiC , diamond , Radiation damage properties
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2002
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2196484

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2196484