Title of article :
Theoretical calculations of the primary defects induced by pions and protons in SiC
Author/Authors :
Lazanu، نويسنده , , S. and Lazanu، نويسنده , , I. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
Keywords :
Silicon , GaAS , hadrons , SiC , diamond , Radiation damage properties
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
