Author/Authors :
Sadrozinski، نويسنده , , H.F.-W. and Baselga، نويسنده , , Isabel M. and Ely، نويسنده , , S. and Fadeyev، نويسنده , , V. and Galloway، نويسنده , , Z. and Ngo، نويسنده , , J. and Parker، نويسنده , , C. and Schumacher، نويسنده , , D. and Seiden، نويسنده , , A. and Zatserklyaniy، نويسنده , , A. and Cartiglia، نويسنده , , N. and Pellegrini، نويسنده , , G. and Fernلndez-Martيnez، نويسنده , , P. and Greco، نويسنده , , V. and Hidalgo، نويسنده , , S. and Quirion، نويسنده , , D.، نويسنده ,
Abstract :
We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.
Keywords :
Fast silicon sensors , Charge multiplication , Pixel detectors , Thin tracking sensors , Silicon strip
