Author/Authors :
Vaitkus، نويسنده , , J. and Gaubas، نويسنده , , E. and Jasinskaite، نويسنده , , R. and Juska، نويسنده , , G. and Kazukauskas، نويسنده , , V. and Puras، نويسنده , , R. and Rahman، نويسنده , , M. and Sakalauskas، نويسنده , , S. and Smith، نويسنده , , K.، نويسنده ,
Abstract :
Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different “classical” material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented.
esults of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods.
Keywords :
GaAs , SI , Inhomogeneities , Free carrier lifetime , Local electric field , SiC
