Title of article
Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation
Author/Authors
Pagano، نويسنده , , R. and Lombardo، نويسنده , , S. and Palumbo، نويسنده , , F. and Sanfilippo، نويسنده , , D. and Valvo، نويسنده , , G. and Fallica، نويسنده , , G. and Libertino، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
6
From page
347
To page
352
Abstract
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Keywords
Silicon PhotoMultiplier , Radiation damage , Radiation hardness , gamma rays
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2014
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2196791
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