Title of article
Characterization of thick epitaxial GaAs layers for X-ray detection
Author/Authors
G.C and Samic، نويسنده , , H and Sun، نويسنده , , G.C and Donchev، نويسنده , , V and Nghia، نويسنده , , N.X and Gandouzi، نويسنده , , M and Zazoui، نويسنده , , M and Bourgoin، نويسنده , , J.C and El-Abbassi، نويسنده , , H and Rath، نويسنده , , S and Sellin، نويسنده , , P.J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
107
To page
112
Abstract
We have studied the current–voltage and capacitance–voltage characteristics of p/i/n structures made on non-intentionally doped epitaxial GaAs layers grown by the chemical reaction method. Deep level transient spectroscopy demonstrates that these layers contain a low defect concentration. X-ray photoconductivity shows that the diffusion length is large. The homogeneity of the properties of these layers, which has been evaluated over large area (cm2), is confirmed by photoluminescence mapping.
Keywords
Epitxial layer , Pin structure , X-ray detector , GaAS
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2002
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2196812
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