Title of article :
Characterization of a silicon pixel detector for imaging with low energy radiation
Author/Authors :
Caria، نويسنده , , M and Cadeddu، نويسنده , , S and Lai، نويسنده , , A. and Sesselego، نويسنده , , A and Quarati، نويسنده , , F، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
We present tests on the characterization of a custom-made high sensitive UV silicon detector with 16,512 pixels and 3.8 cm×2.8 cm active area. The structures were characterized for inter-pixel cross talk and dark current stability and responsivity at 260 nm of UV radiation.
Keywords :
UV , Silicon , Photodetectors , Responsivity , Back-side illumination
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
