Characterization of CdZnTe co-doped with indium and lead

Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I–V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I–V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8×1010 Ω cm, and the mobility (µ) of about 868 cm2/V s, which is considered acceptable for detector’s fabrication. However, the carrier life time (τ) was only 9.44×10−7 s. Therefore, the µτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.