Author/Authors :
Agosteo، نويسنده , , S and Castellani، نويسنده , , L and DʹAngelo، نويسنده , , G and Dal Corso، نويسنده , , F and Dallavalle، نويسنده , , G.M and De Giorgi، نويسنده , , M and Fernandez، نويسنده , , C and Gonella، نويسنده , , F and Lippi، نويسنده , , I and Marin، نويسنده , , J and Martinelli، نويسنده , , R and Montanari، نويسنده , , A and Odorici، نويسنده , , F and Oller، نويسنده , , J.C and Pegoraro، نويسنده , , M and Torromeo، نويسنده , , G and Travaglini، نويسنده , , R and Verlato، نويسنده , , M and Willmott، نويسنده , , C and Zotto، نويسنده , , P، نويسنده ,
Abstract :
Several irradiation tests of the electronics of the CMS barrel muon detector were performed using neutrons, protons and heavy ions. The Single Event Upset rate on some tested devices was measured, while upper limits were obtained for devices having experienced no failure. Single Event Transients on front-end electronics and destructive effects on the High-voltage distribution electronics were observed. Overcurrent protection and error correction circuits were included in the irradiated boards and were tested.
Keywords :
SEU , Single event upsets , Single Event Effects , Radiation tolerance
