Frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors

The dependence on measurement frequency and temperature of the depletion voltage extracted in the standard way from the CV characteristics of heavily irradiated silicon detectors is studied, parameterised and fitted. A similar pattern of behaviour is observed for a wide range of analysed detectors. A formula is derived which allows correction of the depletion voltage from one frequency–temperature point to another.