Author/Authors :
Chiodini، نويسنده , , G and Appel، نويسنده , , J.A and Cardoso، نويسنده , , G and Christian، نويسنده , , D.C and Coluccia، نويسنده , , M.R and Hoff، نويسنده , , J and Kwan، نويسنده , , S.W and Mekkaoui، نويسنده , , A and Yarema، نويسنده , , R and Zimmermann، نويسنده , , S، نويسنده ,
Abstract :
In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 μm CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.
