Author/Authors :
Takahashi، نويسنده , , T and Ukai، نويسنده , , M and Yoshida، نويسنده , , A and Fujii، نويسنده , , Y and Dobashi، نويسنده , , K and Hashimoto، نويسنده , , O and Maeda، نويسنده , , K and Miyamoto، نويسنده , , A and Miyoshi، نويسنده , , T and Nakamura، نويسنده , , S.N and Okayasu، نويسنده , , Y and Tamae، نويسنده , , T and Tamura، نويسنده , , H and Tsukada، نويسنده , , K and Watanabe، نويسنده , , T، نويسنده ,
Abstract :
A single-sided N-type silicon microstrip detector (SSD) was directly irradiated by a 200 MeV electron beam in order to examine radiation hardness. The leakage current increased linearly with the fluence up to 5×1014/cm2. The SSD efficiency began to drop at 2×1014/cm2, but was recovered by increasing the bias to 150 V and was maintained up to 3×1014/cm2. Noise figures increased slightly, but were within acceptable levels. Our results show that SSDs can operate up to a 200 MeV electron fluence of 3×1014/cm2 without any significant degradation in performance.
