Title of article
Gas electron multiplier produced with the plasma etching method
Author/Authors
Inuzuka، نويسنده , , M. and Hamagaki، نويسنده , , H. and Ozawa، نويسنده , , K. and Tamagawa، نويسنده , , T. and Isobe، نويسنده , , T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
529
To page
534
Abstract
We have produced Gas Electron Multiplier (GEM) using the plasma etching method. The new GEM has holes with a cylindrical shape and can hold up to 520 V in nitrogen. Amplification factor was measured as a function of the applied voltage. A gain of 104 was obtained in argon-mixture gases. The gain characteristics are very similar to those of the GEMs made at CERN.
Keywords
GAIN , Cylindrical shape , plasma etching , GEM , GEM test setup
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2004
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2198246
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