Title of article :
Study of the Hamamatsu avalanche photodiode at liquid nitrogen temperatures
Author/Authors :
Dorokhov، نويسنده , , A. and Glauser، نويسنده , , A. and Musienko، نويسنده , , Y. and Regenfus، نويسنده , , C. and Reucroft، نويسنده , , S. K. Swain، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
Dependence of the gain and the dark current on bias voltage, has been studied for the S8148 Hamamatsu avalanche photodiode (APD) over a wide range of temperatures. It was found that at T=108 K this APD can operate at a gain close to 10 000. At T=108 K the combination of the S8148 APD operated in proportional mode and the low noise amplifier allows photon counting with high efficiency, while keeping the noise count rate at a relatively low level.
Keywords :
Excess noise , GAIN , Silicon avalanche photodiode
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
