Title of article :
Studies of radiation effects in the NA60 silicon pixel detectors
Author/Authors :
Keil، نويسنده , , M. and Banicz، نويسنده , , K. and Brugger، نويسنده , , M. and Floris، نويسنده , , M. and Heuser، نويسنده , , J.M. and Lourenço، نويسنده , , C. and Ohnishi، نويسنده , , H. and Radermacher، نويسنده , , E. and Usai، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
9
From page :
448
To page :
456
Abstract :
NA60 is a fixed target experiment at the CERN SPS, which studies dimuon production in proton- and ion-induced collisions. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the interactions. During the 2003 data taking period with indium–indium collisions at 158 GeV per incident nucleon, a significant radiation dose with a very inhomogeneous distribution has been accumulated in the pixel telescope, leading to partially type-inverted silicon sensors. Measurements of the depletion voltage and leakage current performed during this run are shown and compared with simulation results. It is also shown that the operation of partially type-inverted sensors poses no major problem.
Keywords :
Silicon , Radiation damage , Pixel detector , Vertex detector
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2005
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2199068
Link To Document :
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