Title of article :
Super-sensitive avalanche silicon photodiode with surface transfer of charge carriers
Author/Authors :
Sadygov، نويسنده , , Z.Ya. and Jejer، نويسنده , , V.N. and Musienko، نويسنده , , Yu.G. and Sereda، نويسنده , , T.V. and Stoikov، نويسنده , , A.V. and Zheleznykh، نويسنده , , I.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
New avalanche photodetector, combining properties of avalanche photodiode and charge coupled device was developed on the basis of MOSFET technology. The device employs the gain control and stabilization and is sensitive in visible and ultraviolet spectral regions. Experimental results with the new device are presented.
Keywords :
avalanche , detector , Photon detection , photodiode
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
