Author/Authors :
Perea Solano، نويسنده , , B. and Abreu، نويسنده , , M.C. and Avati، نويسنده , , V. and Boccali، نويسنده , , T. and Boccone، نويسنده , , V. and Bozzo، نويسنده , , M. and Capra، نويسنده , , R. and Casagrande، نويسنده , , L. and Chen، نويسنده , , W. and Eggert، نويسنده , , K. and Heijne، نويسنده , , E. and Klauke، نويسنده , , S. and Li، نويسنده , , Z. and Mنki، نويسنده , , T. and Mirabito، نويسنده , , L. and Morelli، نويسنده , , A. and Niinikoski، نويسنده , , T.O. and Oljemark، نويسنده , , F. and Palmieri، نويسنده , , V.G. and Rato Mendes، نويسنده , , P. and Rodrigues، نويسنده , , S. and Siegrist، نويسنده , , P. and Silvestris، نويسنده , , L. and Sousa، نويسنده , , P. and Tapprogge، نويسنده , , S. and Trocmé، نويسنده , , B.، نويسنده ,
Abstract :
We report measurements in a high-energy beam of the sensitivity of the edge region in “edgeless” planar silicon pad diode detectors. The edgeless side of these rectangular diodes is formed by a cut and break through the contact implants. A large surface current on such an edge prevents the normal reverse biasing of this device above the full depletion voltage, but we have shown that the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at a low temperature. A pair of these edgeless silicon diode pad sensors was exposed to the X5 high-energy pion beam at CERN, to determine the edge sensitivity. The signal of the detector pair triggered a reference telescope made of silicon microstrip detector modules. The gap width between the edgeless sensors, determined using the tracks measured by the reference telescope, was then compared with the results of precision metrology. It was concluded that the depth of the dead layer at the diced edge is compatible with zero within the statistical precision of ±8 μm and systematic error of ±6 μm.
