Author/Authors :
Chefdeville، نويسنده , , M. and Colas، نويسنده , , P. and Giomataris، نويسنده , , Y. and van der Graaf، نويسنده , , H. and Heijne، نويسنده , , E.H.M. and van der Putten، نويسنده , , S. and Salm، نويسنده , , Paulo C. and Schmitz، نويسنده , , J. and Smits، نويسنده , , S. and Timmermans، نويسنده , , J. and Visschers، نويسنده , , J.L.، نويسنده ,
Abstract :
A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μ m by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
Keywords :
Wafer-scale integration , SU-8 , Electron gas multiplication , Integrated grid , Micromegas , Wafer post-processing , Microsensors , Microelectrodes
