Title of article :
Performances of epitaxial GaAs detectors
Author/Authors :
Bréelle، نويسنده , , G.C and Samic، نويسنده , , H and Sun، نويسنده , , G.C and Bourgoin، نويسنده , , J.C، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
26
To page :
29
Abstract :
The aim of the study is to show that the thick epitaxial layers we grow using the Chemical Reaction method, a method which overcomes the difficulties in producing thick epitaxial layers, can provide detectors which have the same high performances, established since the 1970s and recently confirmed, as the ones made by conventional epitaxial methods. For this, we performed counting detection of high-energy protons, electrons, gamma and alpha particles with detectors made with such layers. The results obtained in each case are discussed in terms of energy resolution and charge collection efficiency.
Keywords :
GaAS , detector , p–i–n structure , epitaxy
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2003
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2200011
Link To Document :
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