Author/Authors :
Fiederle، نويسنده , , M. and Fauler، نويسنده , , A. and Babentsov، نويسنده , , V. and Franc، نويسنده , , J. and Konrath، نويسنده , , J. and Webel، نويسنده , , M. and Ludwig، نويسنده , , Edwin J. and Benz، نويسنده , , K.W.، نويسنده ,
Abstract :
CdTe crystals have been grown by the Vertical Bridgman method with diameters of 25, 45 and 75 mm. Improvements of the crystallinity could be achieved by reduction of twins and growth of large single crystalline grains up to 40×40 mm2. CdTe:Ge has been grown with resistivities up to 2×1010 Ω cm . The samples showed a mobility-lifetime product of 5.7×10−5 for holes.
Keywords :
Crystal growth , radiation detector , Ge doping , CdTe
