p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals

It had been shown that ion implantation of nitrogen into zinc oxide film (nitrogen is an acceptor impurity in ZnO) could result in the formation of the hole type of conductivity only in the case of annealing in the atmosphere of oxygen radicals. The ion implantation and the following annealing had influenced not only at the electrical properties of ZnO:N+ layers but also at their photoluminescence spectra. The luminescence bands which are due to the introducing of nitrogen had appeared in the ultraviolet and visible ranges of spectra.