Title of article
Luminescence and photoelectric spectra of ZnSe/CdxZn1−xSe superlattices
Author/Authors
Agafonov، نويسنده , , E.N. and Georgobiani، نويسنده , , A.N. and Lepnev، نويسنده , , L.S. and Sadofyev، نويسنده , , Yu.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
122
To page
125
Abstract
The electroluminescence and photovoltage spectra of the ZnSe/CdxZn1−xSe superlattices with non-doping layers, grown by molecular beam epitaxy, have been measured. Narrow lines in the range 500–560 nm have been observed in electroluminescence measurements at 77 and 293 K. Well-resolved peaks attributed to carrier excitation, as well as photosensitivity bands corresponding to the CdxZn1−xSe/ZnSe superlattice region and the ZnSe buffer layer, have been observed in photovoltaic measurements.
Keywords
epitaxy , II–VI compounds , electroluminescence , Photovoltage , superlattices
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2003
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2200656
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