Title of article :
Double-layer silicon PIN photodiode X-ray detector for a future X-ray timing mission
Author/Authors :
Feng، نويسنده , , Hua and Kaaret، نويسنده , , Philip and Andersson، نويسنده , , Hans، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
A double-layer silicon detector consisting of two 500 - μ m -thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1 to 30 keV with an effective area of 6 mm 2 . The detector performs best at - 35 ∘ C with an energy resolution of 220 eV (FWHM, full-width at half-maximum) at 5.9 keV, and is able to operate at room temperature, + 25 ∘ C , with moderate resolution around 760 eV (FWHM). The response of the top layer sensor is highly uniform across the sensitive area. This large-format silicon detector is appropriate for future X-ray timing missions.
Keywords :
X-Ray , SI , PIN , timing
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A