Title of article :
Device simulation of irradiated silicon detectors at cryogenic temperatures
Author/Authors :
Santocchia، نويسنده , , A. and MacEvoy، نويسنده , , B. and Hall، نويسنده , , G. and Moscatelli، نويسنده , , Elkan F. and Passeri، نويسنده , , D. and Pignatel، نويسنده , , G.U.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
2
From page :
352
To page :
353
Abstract :
Radiation hardness is a critical design constraint for current and future generation silicon detectors, which are foreseen to undergo radiation fluences higher than 1×1014 cm−2 1-MeV neutron equivalent. Recently, low-temperature operating conditions have been suggested as an effective means to recover the negative effects of radiation damage on silicon detector collection properties. In order to investigate such an effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The simulated results are compared with charge collection spectra obtained with 1064 nm laser pulses on devices irradiated with 23 GeV protons as a function of detector bias voltage. Thousands of simulation results have been cross-checked with the experimental data. The results obtained so far indicate that the “three-level model” can be successfully extended to predict irradiated detector behavior at least down to a temperature of 190 K.
Keywords :
Modelling , Radiation effects , cryogenic temperatures , Particle physics
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2004
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2201347
Link To Document :
بازگشت