Title of article :
Single event upset rate of 140 Mb/s pixel-data serializer
Author/Authors :
Chiodini، نويسنده , , G and Appel، نويسنده , , J.A and Cardoso، نويسنده , , G and Christian، نويسنده , , D.C and Hall، نويسنده , , B and Hoff، نويسنده , , J and Kwan، نويسنده , , S.W and Mekkaoui، نويسنده , , A and Moroni، نويسنده , , L and Uplegger، نويسنده , , L and Zimmermann، نويسنده , , S، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
2
From page :
507
To page :
508
Abstract :
We report on high-dose irradiation studies performed with a 200 MeV proton beam on a 140 Mbit/s pixel-data serializer prototype realized in standard 0.25 μm CMOS technology. The data serializer was implemented recently for the BTeV pixel readout chip developed at Fermilab.
Keywords :
Serializer , Proton irradiation , Single event upset , pixel , Readout chip
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2004
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2201400
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2201400
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