Title of article :
Recent advances of planar silicon APD technology
Author/Authors :
McClish، نويسنده , , M. and Farrell، نويسنده , , R. and Myers، نويسنده , , R. and Olschner، نويسنده , , F. and Entine، نويسنده , , G. and Shah، نويسنده , , K.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
36
To page :
40
Abstract :
Radiation Monitoring Devices previously reported to have fabricated, using a planar processed, deep diffused silicon avalanche photodiodes (APDs) and position sensitive APDs (PSAPDs) that can be used for direct or scintillation-based spectroscopic and imaging applications. We have developed high gain (∼1000), high quantum efficiency (40–70% in the 200–900 nm region) at unity gain, relatively low noise, and magnetically insensitive APDs up to 45 cm2 in area and PSAPDs up to 2.8×2.8 cm2 in area. These detectors have begun to be implemented in applications such as positron emission tomography (PET) and single photon emission computerized tomography (SPECT) for medical imaging, high-energy physics experiments as water Cherenkov detectors and liquefied noble gas calorimeters, and receivers for long-range optical communication at near infrared (IR) wavelengths (1064 nm). Also, our PSAPDs have been combined with photocathode structures, similar to a photomultiplier tube (PMT), to fabricate hybrid devices. Here, we present a small review and a sample of results showing various applications utilizing our planar processed APDs and PSAPDs.
Keywords :
Silicon , Position sensitive , APD , gamma rays , Imaging , photodetector
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2006
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2201744
Link To Document :
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