Author/Authors :
Ruggiero، نويسنده , , S.T and Williams، نويسنده , , A and Rippard، نويسنده , , W.H and Clark، نويسنده , , A.M and Deiker، نويسنده , , S.W and Young، نويسنده , , B.A and Vale، نويسنده , , L.R. and Ullom، نويسنده , , J.N، نويسنده ,
Abstract :
We discuss results on the superconducting and electron-transport properties of Mn-doped Al produced by sputter deposition. The critical temperature of Al has been systematically reduced to below 50 mK by doping with 1000–3000 ppm Mn. Values of the α parameter are in the range of 450–500, indicating sharp normal-to-superconductor transitions. This material is thus of significant interest for both transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor and superconductor/insulator/normal devices, in the latter case where appropriately doped Al–Mn replaces the normal metal.
