DEPFET sensor design using an experimental 3d device simulator

A DEPFET sensor array element with rectangularly shaped channel geometry is simulated and optimized using an experimental three-dimensional (3d) device simulator. Due to the relatively large detector volume, the highly refined discretization necessary in MOS channels and the existence of floating potential regions within the DEPFET, the simulation is challenging especially in three dimensions. The results give valuable insight into all operation stages. Charge collection is in the focus here but also Read and Clear operation of the DEPFET are considered in order to evaluate the response of the device to a signal charge. The results are used to design the next DEPFET prototypes for ILC. The numerical features of the experimental 3d code are briefly discussed.