Title of article
Development of ultra-low impedance Through-wafer Micro-vias
Author/Authors
Finkbeiner، نويسنده , , Lucas F.M and Adams، نويسنده , , C. and Apodaca، نويسنده , , E. and Chervenak، نويسنده , , J.A. and Fischer، نويسنده , , Karl J. and Doan، نويسنده , , N. and Li، نويسنده , , M.J. and Stahle، نويسنده , , C.K and Brekosky، نويسنده , , R.P and Bandler، نويسنده , , S.R and Figueroa-Feliciano، نويسنده , , E. and Lindeman، نويسنده , , M.A and Kelley، نويسنده , , R.L and Saab، نويسنده , , T. and Talley، نويسنده , , D.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
3
From page
463
To page
465
Abstract
Concurrent with our microcalorimeter array fabrication for Constellation-X technology development, we are developing ultra-low impedance Through-Wafer Micro-Vias (TWMV) as electrical interconnects for superconducting circuits. The TWMV will enable the electrical contacts of each detector to be routed to contacts on the backside of the array. There, they can be bump-bonded to a wiring fan-out board which interfaces with the front-end Superconducting Quantum Interference Device readout. We are concentrating our developmental efforts on ultra-low impedance copper and superconducting aluminum TWMV in 300–400 micron thick silicon wafers. For both schemes, a periodic pulse-reverse electroplating process is used to fill or coat micron-scale through-wafer holes of aspect ratios up to 20. Here we discuss the design, fabrication process, and recent electro-mechanical test results of Al and Cu TWMV at room and cryogenic temperatures.
Keywords
Through-Wafer Micro-Via , High-aspect ratio etching , PPR electro-deposition , cryogenic temperatures
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2004
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2201972
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